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Fabrication, Properties and Applications of Low-Dimensional Semiconductors (NATO Science Partnership Subseries: 3, 3) 1995th Edition by M. Balkanski (Editor), Ivan Yanchev (Editor) OUR REFERENCE: 113E2-A4-0792335694-HC-4P1-lb-Wh-B48 - encadernado, livro de bolso

ISBN: 9780792335696

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Fabrication, Properties and Applications of Low-Dimensional Semiconductors - encadernado, livro de bolso

1995, ISBN: 0792335694

[EAN: 9780792335696], Neubuch, [PU: Springer Netherlands], POTENTIAL DEVELOPMENT ELECTRICALENGINEERING PHYSICS TECHNOLOGY TECHNIK MASCHINENBAU FERTIGUNGSTECHNIK ELECTRICAL ENGINEERING SEM… mais…

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Fabrication, Properties and Applications of Low-Dimensional Semiconductors - encadernado, livro de bolso

1995, ISBN: 0792335694

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Fabrication Properties and Applications of Low-Dimensional Semiconductors - encadernado, livro de bolso

ISBN: 0792335694

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Fabrication Properties and Applications of Low-Dimensional Semiconductors
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0792335694


A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.

Dados detalhados do livro - Fabrication Properties and Applications of Low-Dimensional Semiconductors


EAN (ISBN-13): 9780792335696
ISBN (ISBN-10): 0792335694
Livro de capa dura
Livro de bolso
Ano de publicação: 1995
Editor/Editora: Springer Netherlands
476 Páginas
Peso: 0,871 kg
Língua: eng/Englisch

Livro na base de dados desde 2008-02-05T15:27:52+00:00 (Lisbon)
Página de detalhes modificada pela última vez em 2023-12-02T23:09:45+00:00 (Lisbon)
Número ISBN/EAN: 0792335694

Número ISBN - Ortografia alternativa:
0-7923-3569-4, 978-0-7923-3569-6
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: balkanski
Título do livro: sozopol, drei dimensional, semiconductors, balkanski

Dados da editora

Autor: M. Balkanski; Ivan Yanchev
Título: NATO Science Partnership Subseries: 3; Fabrication, Properties and Applications of Low-Dimensional Semiconductors
Editora: Springer; Springer Netherland
457 Páginas
Ano de publicação: 1995-07-31
Dordrecht; NL
Língua: Inglês
320,99 € (DE)
329,99 € (AT)
354,00 CHF (CH)
Available
XIII, 457 p.

BB; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Werkstoffprüfung; Verstehen; Potential; development; electrical engineering; physics; semiconductors; technology; Characterization and Analytical Technique; Optical Materials; Electrical and Electronic Engineering; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Elektrotechnik; BC

Molecular Beam Epitaxy — Fundamental Growth Aspects and Selected Contributions to Physics and Applications of Low-Dimensional Semiconductor Structures.- Preparation of Quantum Structures: Quantum Well Infrared Detectors.- Heteroepitaxy of Layered III-VI Semiconductor GaSe On Si(111) 7x7 Surface.- Fabrication and Simulation of 0.1 ?m Pseudomorphic HEMTs. The Role of Partially Depleted p-Buffer.- Crystal Structure Investigation of PbO Thin Films Produced by Pulsed Laser Evaporation.- Modeling, Simulation and Characterization of the Metal-semiconductor Micro/Nanostructures.- Electronic States in Quantum Wells and Superlattices.- A New Method to Compute Subband Energy States of Low-Dimensional Systems by Using Feynman Path Integrals.- Bound-to-Continuum State Absorption Line Shape in Quantum Well Structures.- A Tight Binding Calculation of Transition Energies in Triangular Symmetrical Quantum Wells.- Separation of Variables in the One-Electron Schrödinger Equation for Quasi-One Dimensional Electron systems.- Transfer Matrix Based Calculations of Energy Levels in Strained In-GaAs/GaAs Multiple Quantum Wells.- Electrons and Holes in Quantum Structures.- Anomalous Evolution of Photoluminescence of Porous Silicon Layers at UV Irradiation.- Hot Hole p-Ge Lasers and Masers for Spectroscopy of Multiquantum-Well HeterostructuresGe/Gei-xSix.- New Experimental Approach to the Excess Carrier Transfer in Semiconductor Structures Based on Time Resolved Photovoltage.- Some Optical Properties of Semiconductor Quantum Well Heterostructurcs.- Size-Dependent Carrier Recombination in CdS Nanocrystals in Single-Electron and Plasma Regimes.- Quantum Hall Effect. Empirical Trends and Relations.- Persistent Currents in Mesoscopic Rings. Interference Effects in Disordered Multichain Rings inMagnetic Field.- Grating Assisted Electromagnetic Emission from Magnetoplasmon and Cyclotron Modes in Two-Dimensional Plasma Layer on GaAs. A Rigorous Theory.- Lattice Dynamics of HgBa2CuO3.- Advanced Optical Waveguide Structures.- Electrooptic Effect in Proton Exchanged LiNbO3 Waveguides.- Higher-Order Wave and Charge Confinement Effects in Semiconductor Double-Doped Optical Fibers: Quasi-Soliton Propagation and Bistability.- Waves in Gyrotropic Media.- Nonlinear Optical Devices.- Nonlinear Integrated Optics and All-Optical Waveguide Switching in Semiconductors.- Complete Switching With an Improvement in the Switching Intensity in AlGaAs Nonlinear Directional Couplers Using the Higher Order Orthogonal Modes.- A New Technique of Quantum Well Disordering and its Application to Integrated All-Optical Switches.

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