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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Livro de bolso

ISBN: 3866280874

[SR: 3286698], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… mais…

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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Livro de bolso

ISBN: 3866280874

[SR: 3630700], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… mais…

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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Livro de bolso

ISBN: 3866280874

[SR: 4092895], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this w… mais…

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Livro de bolso

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… mais…

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Timm Höhr
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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Livro de bolso

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… mais…

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)
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3866280874


Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility.

Dados detalhados do livro - Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)


ISBN (ISBN-10): 3866280874 (ISBN-13: 9783866280878)
Livro de bolso
Editor/Editora: Hartung-Gorre

Livro na base de dados desde 2008-09-12T23:14:04+01:00 (Lisbon)
Página de detalhes modificada pela última vez em 2018-01-17T14:14:57+00:00 (Lisbon)
Número ISBN/EAN: 3866280874

Número ISBN - Ortografia alternativa:
3-86628-087-4
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: timm

Dados da editora

Autor: Timm Höhr
Título: Series in Microelectronics; Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices
Editora: Hartung-Gorre
134 Páginas
Ano de publicação: 2006-10-10
Língua: Inglês
64,00 € (DE)
65,80 € (AT)
125,20 CHF (CH)
Not available (reason unspecified)

BC; KART; Hardcover, Softcover / Informatik, EDV/Hardware; Computerhardware; Ingenieurwissenschaften; semiconductor device modeling; Shockley-Read-Hall recombination; quantum transport; tunneling effect

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