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Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films : Incorporation of n- and p-type dopants in InAs thin films using the MOCVD technique - Livro de bolso
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], nach der Bestellung gedruckt Neuware - Printed after ordering - Many quantum confined devices such as lasers and high… mais…
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], nach der Bestellung gedruckt Neuware - Printed after ordering - Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. 104 pp. Englisch, Books<
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Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the … mais…
Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. Buch (fremdspr.) Taschenbuch, LAP LAMBERT Academic Publishing, 14.07.2011, LAP LAMBERT Academic Publishing, 2011<
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Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films Incorporation of n and ptype dopants in InAs thin films using the MOCVD technique - Livro de bolso
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established selle… mais…
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000, Books<
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Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films Incorporation of n and ptype dopants in InAs thin films using the MOCVD technique - Livro de bolso
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000., Books
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MOCVD growth and electrical characterisation of InAs thin films : Incorporation of n- and p-type dopants in InAs thin films using the MOCVD technique - Livro de bolso
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], nach der Bestellung gedruckt Neuware - Printed after ordering - Many quantum confined devices such as lasers and high… mais…
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], nach der Bestellung gedruckt Neuware - Printed after ordering - Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. 104 pp. Englisch, Books<
NEW BOOK. Custos de envio:Versandkostenfrei. (EUR 0.00) AHA-BUCH GmbH, Einbeck, Germany [51283250] [Rating: 5 (von 5)]
Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the … mais…
Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. Buch (fremdspr.) Taschenbuch, LAP LAMBERT Academic Publishing, 14.07.2011, LAP LAMBERT Academic Publishing, 2011<
Nr. 29375496. Custos de envio:, Versandfertig innert 4 - 7 Werktagen, zzgl. Versandkosten. (EUR 16.38)
Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films Incorporation of n and ptype dopants in InAs thin films using the MOCVD technique - Livro de bolso
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established selle… mais…
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000, Books<
NEW BOOK. Custos de envio: EUR 9.37 PBShop.store UK, Fairford, GLOS, United Kingdom [190245] [Rating: 5 (von 5)]
Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films Incorporation of n and ptype dopants in InAs thin films using the MOCVD technique - Livro de bolso
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000., Books
NEW BOOK. Custos de envio: EUR 4.58 PBShop.store US, Wood Dale, IL, U.S.A. [8408184] [Rating: 5 (von 5)]
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Many quantum confined devices such as lasers and high electron mobility transistors make use of the....
Dados detalhados do livro - MOCVD growth and electrical characterisation of InAs thin films
EAN (ISBN-13): 9783845409887 ISBN (ISBN-10): 3845409886 Livro de capa dura Livro de bolso Ano de publicação: 2011 Editor/Editora: LAP Lambert Acad. Publ.
Livro na base de dados desde 2009-10-06T09:10:48+01:00 (Lisbon) Página de detalhes modificada pela última vez em 2023-06-21T03:57:50+01:00 (Lisbon) Número ISBN/EAN: 3845409886
Número ISBN - Ortografia alternativa: 3-8454-0988-6, 978-3-8454-0988-7 Ortografia alternativa e termos de pesquisa relacionados: Título do livro: thin films, seeing through films
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