2016, ISBN: 366249681X
[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE; FESTKÖRPERPHYSIK; ELEKTRONIK / HALBLEITER; LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE; … mais…
ZVAB.com AHA-BUCH GmbH, Einbeck, Germany [51283250] [Rating: 5 (von 5)] NEW BOOK. Custos de envio:Versandkostenfrei. (EUR 0.00) Details... |
2022, ISBN: 9783662496817
[ED: Buch], [PU: Springer Berlin Heidelberg], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the … mais…
booklooker.de |
2016, ISBN: 9783662496817
[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… mais…
booklooker.de buecher.de GmbH & Co. KG Custos de envio:Versandkostenfrei, Versand nach Deutschland. (EUR 0.00) Details... |
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… mais…
BarnesandNoble.com new in stock. Custos de envio:zzgl. Versandkosten., mais custos de envio Details... |
2016, ISBN: 366249681X
[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE FESTKÖRPERPHYSIK ELEKTRONIK HALBLEITER LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE NANOTE… mais…
ZVAB.com moluna, Greven, Germany [73551232] [Rating: 4 (von 5)] NEW BOOK. Custos de envio:Versandkostenfrei. (EUR 0.00) Details... |
2016, ISBN: 366249681X
[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE; FESTKÖRPERPHYSIK; ELEKTRONIK / HALBLEITER; LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE; … mais…
2022, ISBN: 9783662496817
[ED: Buch], [PU: Springer Berlin Heidelberg], Neuware - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the … mais…
2016
ISBN: 9783662496817
[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… mais…
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… mais…
2016, ISBN: 366249681X
[EAN: 9783662496817], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CHEMIE FESTKÖRPERPHYSIK ELEKTRONIK HALBLEITER LEITUNG (PHYSIKALISCH) MASSENSPEKTROMETRIE - SPEKTROMETRIE NANOTE… mais…
Dados bibliográficos do melhor livro correspondente
Dados detalhados do livro - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li Author
EAN (ISBN-13): 9783662496817
ISBN (ISBN-10): 366249681X
Livro de capa dura
Ano de publicação: 1
Editor/Editora: Springer Berlin Heidelberg Core >2
Livro na base de dados desde 2016-03-08T19:29:30+00:00 (Lisbon)
Página de detalhes modificada pela última vez em 2024-02-27T14:13:41+00:00 (Lisbon)
Número ISBN/EAN: 9783662496817
Número ISBN - Ortografia alternativa:
3-662-49681-X, 978-3-662-49681-7
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: schottky
Título do livro: the source, mos, germanium, springer theses
Dados da editora
Autor: Zhiqiang Li
Título: Springer Theses; The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Editora: Springer; Springer Berlin
59 Páginas
Ano de publicação: 2016-06-22
Berlin; Heidelberg; DE
Impresso / Feito em
Peso: 0,454 kg
Língua: Inglês
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XIV, 59 p. 52 illus., 49 illus. in color.
BB; Semiconductors; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronische Geräte und Materialien; Verstehen; Elektrotechnik, Elektronik; Contact resistance; Thermal stability; Germanium-based MOSFET; Dopant segregation; Source and drain; Nickel germanide; Dopant activation; MOS device; Electronic Circuits and Devices; Nanoscale Science and Technology; Solid State Physics; Semiconductors; Electronic Circuits and Systems; Nanophysics; Condensed Matter Physics; Schaltkreise und Komponenten (Bauteile); Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; EA; BC
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.Outros livros adicionais, que poderiam ser muito similares com este livro:
Último livro semelhante:
9783662570265 The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Zhiqiang Li)
< Para arquivar...