2001, ISBN: 9783709103814
[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools req… mais…
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2010, ISBN: 3709103819
[EAN: 9783709103814], Neubuch, [PU: Springer Vienna], ELEKTRONIK MIKROELEKTRONIK INGENIEURWISSENSCHAFT - INGENIEURWISSENSCHAFTLER TECHNIK ELEKTROTECHNIK NACHRICHTENTECHNIK SEMICONDUCTOR D… mais…
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Straininduced Effects in Advanced Mosfets Computational Microelectronics - encadernado, livro de bolso
2011, ISBN: 9783709103814
Hardcover, PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
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Straininduced Effects in Advanced Mosfets Computational Microelectronics - encadernado, livro de bolso
2011, ISBN: 9783709103814
Hardcover, New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
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2010, ISBN: 9783709103814
Hard cover, New., Sewn binding. Cloth over boards. 252 p. Contains: Tables, black & white. Computational Microelectronics., Vienna, [PU: Springer]
| alibris.co.uk |
2001, ISBN: 9783709103814
[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools req… mais…
no/na AbeBooks.de
2010, ISBN: 3709103819
[EAN: 9783709103814], Neubuch, [PU: Springer Vienna], ELEKTRONIK MIKROELEKTRONIK INGENIEURWISSENSCHAFT - INGENIEURWISSENSCHAFTLER TECHNIK ELEKTROTECHNIK NACHRICHTENTECHNIK SEMICONDUCTOR D… mais…
Straininduced Effects in Advanced Mosfets Computational Microelectronics - encadernado, livro de bolso
2011
ISBN: 9783709103814
Hardcover, PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
Straininduced Effects in Advanced Mosfets Computational Microelectronics - encadernado, livro de bolso
2011, ISBN: 9783709103814
Hardcover, New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
2010, ISBN: 9783709103814
Hard cover, New., Sewn binding. Cloth over boards. 252 p. Contains: Tables, black & white. Computational Microelectronics., Vienna, [PU: Springer]
Dados bibliográficos do melhor livro correspondente
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Dados detalhados do livro - Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics)
EAN (ISBN-13): 9783709103814
ISBN (ISBN-10): 3709103819
Livro de capa dura
Ano de publicação: 2010
Editor/Editora: Springer
252 Páginas
Peso: 0,633 kg
Língua: eng/Englisch
Livro na base de dados desde 2011-04-09T20:17:05+01:00 (Lisbon)
Página de detalhes modificada pela última vez em 2023-07-05T18:56:42+01:00 (Lisbon)
Número ISBN/EAN: 9783709103814
Número ISBN - Ortografia alternativa:
3-7091-0381-9, 978-3-7091-0381-4
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: viktor
Título do livro: mosfet, mosfets, viktor, microelectronics
Dados da editora
Autor: Viktor Sverdlov
Título: Computational Microelectronics; Strain-Induced Effects in Advanced MOSFETs
Editora: Springer; Springer Wien
252 Páginas
Ano de publicação: 2010-11-24
Vienna
Língua: Inglês
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
Available
XIV, 252 p.
BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; semiconductor devices; strain technique; transport modeling; Electronics and Microelectronics, Instrumentation; EA; BC
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is givencomprehensive overview of strain techniques accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Includes supplementary material: sn.pub/extras
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